Melting laser anneal of epitaxy regions

ABSTRACT

A method includes forming a gate stack over a first semiconductor region, removing a second portion of the first semiconductor region on a side of the gate stack to form a recess, growing a second semiconductor region starting from the recess, implanting the second semiconductor region with an impurity, and performing a melting laser anneal on the second semiconductor region. A first portion of the second semiconductor region is molten during the melting laser anneal, and a second and a third portion of the second semiconductor region on opposite sides of the first portion are un-molten.

BACKGROUND

In integrated circuits, source/drain contact plugs are used forelectrically coupling to the source and drain regions, which may beformed through epitaxy. The source/drain contact plugs are typicallyconnected to source/drain silicide regions. The formation of thesource/drain silicide regions includes forming contact openings byetching dielectric layers covering the source/drain regions, wherein theetched dielectric layers may include a silicon nitride layer and anoxide layer over the silicon nitride layer. The source/drain regions arethus exposed to the contact openings. An additional silicon nitridelayer is formed conformally to cover the sidewalls and the bottoms ofthe contact openings. A second etching step is then performed to removethe bottom portions of the silicon nitride layer to reveal the epitaxysource/drain regions. A metal layer is then formed to extend into thecontact openings, and an anneal process is performed to react the metallayer with the source/drain regions, resulting in source/drain silicideregions to be formed. The remaining portions of the contact openings arethen filled with a metal(s) to form the source/drain contact plugs.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1-4, 5A, 5B, 6A, 6B, 7, 8, 9A, 9B, 9C, 10, 11A, 11B, 11C, 12, 13A,13B, 13C, and 14 are perspective views and cross-sectional views ofintermediate stages in the formation of a Fin Field-Effect Transistor(FinFET) in accordance with some embodiments.

FIG. 15 illustrates the germanium atomic percentage as a function ofdepths in a silicon germanium region as deposited in accordance withsome embodiments.

FIG. 16 illustrates the silicon atomic percentage and germanium atomicpercentage as functions of depths in a vertical direction in accordancewith some embodiments.

FIG. 17 illustrates the silicon atomic percentage and germanium atomicpercentage as functions of depths in a tilted direction in accordancewith some embodiments.

FIG. 18 illustrates the comparison of germanium percentages inaccordance with some embodiments.

FIG. 19 illustrates a process flow for forming a FinFET in accordancewith some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “underlying,” “below,”“lower,” “overlying,” “upper” and the like, may be used herein for easeof description to describe one element or feature's relationship toanother element(s) or feature(s) as illustrated in the figures. Thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. The apparatus may be otherwiseoriented (rotated 90 degrees or at other orientations) and the spatiallyrelative descriptors used herein may likewise be interpretedaccordingly.

Transistors and the methods of forming the same are provided inaccordance with some embodiments. The intermediate stages of forming thetransistors are illustrated in accordance with some embodiments. Somevariations of some embodiments are discussed. Throughout the variousviews and illustrative embodiments, like reference numbers are used todesignate like elements. In accordance with some embodiments, theformation of Fin Field-Effect Transistors (FinFETs) is used as anexample to explain the concept of the present disclosure. Other types oftransistors such as planar transistors may also adopt the concept of thepresent disclosure. In accordance with some embodiments of the presentdisclosure, melting laser anneal is used to anneal epitaxy regions (suchas source/drain regions) of the FinFETs, during which at least someportions of the source/drain regions are molten. Due to the meltinglaser anneal, germanium is piled up to the surface regions of thesource/drain regions, resulting in higher germanium atomic percentage atthe surface regions. The higher germanium percentage results in theSchottky barrier between the source/drain region and the silicide regionto be reduced, and hence the contact resistance to the source and drainregions is reduced.

FIGS. 1-4, 5A, 5B, 6A, 6B, 7, 8, 9A, 9B, 9C, 10, 11A, 11B, 11C, 12, 13A,13B, 13C, and 14 illustrate the cross-sectional views and perspectiveviews of intermediate stages in the formation of a FinFET in accordancewith some embodiments of the present disclosure. The processes shown inthese figures are also reflected schematically in the process flow 200shown in FIG. 19.

FIG. 1 illustrates a perspective view of an initial structure formed onwafer 10. Wafer 10 includes substrate 20. Substrate 20 may be asemiconductor substrate, which may be a silicon substrate, a silicongermanium substrate, or a substrate formed of other semiconductormaterials. Substrate 20 may be doped with a p-type or an n-typeimpurity. Isolation regions 22 such as Shallow Trench Isolation (STI)regions may be formed to extend from a top surface of substrate 20 intosubstrate 20. The portions of substrate 20 between neighboring STIregions 22 are referred to as semiconductor strips 24. The top surfacesof semiconductor strips 24 and the top surfaces of STI regions 22 may besubstantially level with each other in accordance with some embodiments.In accordance with some embodiments of the present disclosure,semiconductor strips 24 are parts of the original substrate 20, andhence the material of semiconductor strips 24 is the same as that ofsubstrate 20. In accordance with alternative embodiments of the presentdisclosure, semiconductor strips 24 are replacement strips formed byetching the portions of substrate 20 between STI regions 22 to formrecesses, and performing an epitaxy to regrow another semiconductormaterial in the recesses. Accordingly, semiconductor strips 24 areformed of a semiconductor material different from that of substrate 20.In accordance with some embodiments, semiconductor strips 24 are formedof silicon germanium, silicon carbon, or a III-V compound semiconductormaterial.

STI regions 22 may include a liner oxide (not shown), which may be athermal oxide formed through a thermal oxidation of a surface layer ofsubstrate 20. The liner oxide may also be a deposited silicon oxidelayer formed using, for example, Atomic Layer Deposition (ALD),High-Density Plasma Chemical Vapor Deposition (HDPCVD), or ChemicalVapor Deposition (CVD). STI regions 22 may also include a dielectricmaterial over the liner oxide, wherein the dielectric material may beformed using Flowable Chemical Vapor Deposition (FCVD), spin-on, or thelike.

Referring to FIG. 2, STI regions 22 are recessed, so that the topportions of semiconductor strips 24 protrude higher than the topsurfaces 22A of the remaining portions of STI regions 22 to formprotruding semiconductor fins 24′. The respective process is illustratedas process 202 in the process flow 200 shown in FIG. 19. The etching maybe performed using a dry etching process, wherein HF₃ and NH₃ are usedas the etching gases. During the etching process, plasma may begenerated. Argon may also be included. In accordance with alternativeembodiments of the present disclosure, the recessing of STI regions 22is performed using a wet etch process. The etching chemical may includeHF, for example.

In above-illustrated embodiments, the fins may be patterned by anysuitable method. For example, the fins may be patterned using one ormore photolithography processes, including double-patterning ormulti-patterning processes. Generally, double-patterning ormulti-patterning processes combine photolithography and self-alignedprocesses, allowing patterns to be created that have, for example,pitches smaller than what is otherwise obtainable using a single, directphotolithography process. For example, in one embodiment, a sacrificiallayer is formed over a substrate and patterned using a photolithographyprocess. Spacers are formed alongside the patterned sacrificial layerusing a self-aligned process. The sacrificial layer is then removed, andthe remaining spacers, or mandrels, may then be used to pattern thefins.

Referring to FIG. 3, dummy gate stack 30 is formed to extend on the topsurfaces and the sidewalls of (protruding) fins 24′. The respectiveprocess is illustrated as process 204 in the process flow 200 shown inFIG. 19. Dummy gate stacks 30 may include dummy gate dielectrics 32 anddummy gate electrodes 34 over dummy gate dielectrics 32. Dummy gateelectrodes 34 may be formed, for example, using polysilicon, and othermaterials may also be used. Each of dummy gate stacks 30 may alsoinclude one (or a plurality of) hard mask layer 36 over dummy gateelectrodes 34. Hard mask layers 36 may be formed of silicon nitride,silicon oxide, silicon carbo-nitride, or multi-layers thereof. Dummygate stacks 30 may cross over a single one or a plurality of protrudingfins 24′ and/or STI regions 22. Dummy gate stacks 30 also havelengthwise directions perpendicular to the lengthwise directions ofprotruding fins 24′.

Next, gate spacers 38 are formed on the sidewalls of dummy gate stacks30. In accordance with some embodiments of the present disclosure, gatespacers 38 are formed of a dielectric material(s) such as siliconnitride, silicon carbo-nitride, or the like, and may have a single-layerstructure or a multi-layer structure including a plurality of dielectriclayers.

An etching step is then performed to etch the portions of protrudingfins 24′ that are not covered by dummy gate stack 30 and gate spacers38, resulting in the structure shown in FIG. 4. The recessing may beanisotropic, and hence the portions of fins 24′ directly underlyingdummy gate stacks 30 and gate spacers 38 are protected, and are notetched. The top surfaces of the recessed semiconductor strips 24 may belower than the top surfaces 22A of STI regions 22 in accordance withsome embodiments. Recesses 40 are accordingly formed between STI regions22. Recesses 40 are located on the opposite sides of dummy gate stacks30, and include some portions lower than the top surfaces of STI regions22, and some portions higher than the top surfaces of STI regions 22 andbetween neighboring gate stacks 30.

Next, a first epitaxy process is performed to form epitaxy portions 42A,which are selectively grown from recesses 40, resulting in the structurein FIG. 5A. The respective process is illustrated as process 206 in theprocess flow 200 shown in FIG. 19. In accordance with some embodiments,epitaxy portions 42A include silicon germanium or silicon. In accordancewith some embodiments of the present disclosure, a p-type impurity suchas boron or indium or gallium is in-situ doped into epitaxy portions 42Awith the proceeding of the epitaxy. After epitaxy portions 42A fullyfill recesses 40, epitaxy portions 42A start expanding horizontally, andfacets may be formed. The neighboring epitaxy portions 42A start mergingwith each other. As a result, an integrated epitaxy region 42A isformed, with the top surface of the integrated epitaxy region 42A beingwavy. Epitaxy portions 42A are sometimes referred to as, or maycomprise, Layer 1 (L1) portions of the epitaxy regions 42 (FIG. 6A).

In accordance with some embodiments of the present disclosure, epitaxyportions 42A comprise silicon germanium with a first germanium atomicpercentage, which may be in the range between about 0 percent and about40 percent. The germanium percentage may be constant from the bottom tothe top of epitaxy regions 42A, or may be gradient, which increasesgradually from bottom to top.

FIG. 5B illustrates a cross-sectional view of the structure shown inFIG. 5A, wherein the cross-sectional view is obtained from the verticalplane containing line 5B-5B in FIG. 5A. In FIG. 5B, the position ofprotruding fins 24′, which is not in the illustrated plane, is shownusing dashed lines to illustrate the relative positions of protrudingfins 24′ and epitaxy portions 42A in accordance with some embodiments.

FIG. 6A illustrates the continued growth of epitaxy regions 42. Therespective process is illustrated as process 208 in the process flow 200shown in FIG. 19. Epitaxy regions 42 include upper portions 42B inaddition to the lower portions 42A. Epitaxy regions 42B may comprisesilicon germanium, and may or may not doped with a p-type impurity suchas boron, indium, gallium, or the like during the epitaxy. Upperportions 42B are sometimes referred to as, or comprise, the Layer 2 (L2)portions of the epitaxy regions 42. The terms L1 and L2 are used todistinguish the portions of epitaxy regions 42 with lower germaniumpercentages and higher germanium percentages, respectively. It isappreciated that the interface between portions L1 and L2 may be lowerthan illustrated, for example, as shown by dashed lines 42′ as examples.In accordance with some embodiments of the present disclosure, upperportions 42B have a second germanium percentage higher than the firstgermanium percentage of lower portions 42A. For example, the secondgermanium percentage may be in the range between about 40 percentage andabout 65 percent. The difference between the atomic percentages of upperportions 42B and lower portions 42A may be higher than, for example,about 20 percent. The second germanium percentage may be constant fromthe bottom to the top of epitaxy regions 42B, or may be gradient, whichincreases gradually. In accordance with some embodiments, upper portions42B includes first portions having gradient (and gradually increasing)germanium percentages (for example, gradually increase from about 30percent to about 50 percent), and second portions over the firstportions, with the second portions having a uniform germanium percentage(for example, between about 50 percent and about 60 percent). FIG. 15illustrates an example of the percentages of epitaxy regions 42 inaccordance with some embodiments of the present disclosure, wherein line152 shows that epitaxy regions 42B have gradually increased germaniumpercentages, and line 150B shows that epitaxy regions 42B have aconstant germanium percentage. The top surfaces of upper portions 42Bmay be planar as shown in FIG. 6A. Throughout the description, epitaxyregions 42 are alternatively referred to as source/drain regions 42.

FIG. 6B illustrates a cross-sectional view of the structure shown inFIG. 6A, wherein the cross-sectional view is obtained from the verticalplane containing line 6B-6B in FIG. 6A. In accordance with someembodiments, layer L1 may be thin, while layer L2 may be much thickerthan layer L1. Lines 42′ represent some possible positions where layersL1 and the corresponding overlying layers L2 join, and the top surfacesof layer L1 may be at any position between the illustrated positions42′.

FIG. 15 illustrates the examples of the germanium percentages in epitaxyregions 42 as a function of the depths of epitaxy regions 42. The depthis shown in FIG. 5B. The X-axis in FIG. 15 represents the depth intoepitaxy regions 42, wherein the value of X-axis equal to zero correspondto the top surfaces of epitaxy regions 42 (FIG. 6B). In accordance withsome embodiments of the present disclosure, the germanium percentage inepitaxy region 42 (as deposited without going through any subsequentanneal) is represented by lines 150A and 150B, which represent that thegermanium in L1 and L2 have constant germanium atomic percentages. Inaccordance with alternatively embodiments of the present disclosure, thegermanium percentage in epitaxy region 42 (as deposited without goingany subsequent anneal) is represented by line 152, which shows that theupper portions of epitaxy regions 42 have gradually increased germaniumpercentages than the respective lower portions.

With the proceeding of the epitaxy, the epitaxy regions 42 grown fromneighboring recesses merge with each other to form an integrated epitaxyregion 42. Voids (air gaps) 43 (FIGS. 6A and 6B) may be generated. Inaccordance with some embodiments of the present disclosure, theformation of epitaxy region 42 is finished when the top surface ofepitaxy regions 42 is still wavy. In accordance with other embodimentsof the present disclosure, the formation of epitaxy region 42 isfinished when the top surface of epitaxy regions 42 has become planar.

FIG. 7 illustrates a perspective view of the structure after theformation of Contact Etch Stop Layer (CESL) 46 and Inter-LayerDielectric (ILD) 48. The respective process is illustrated as process210 in the process flow 200 shown in FIG. 19. CESL 46 may be formed ofsilicon oxide, silicon nitride, silicon carbo-nitride, or the like, andmay be formed using CVD, ALD, or the like. ILD 48 may include adielectric material formed using, for example, FCVD, spin-on coating,CVD, or another deposition method. ILD 48 may be formed of anoxygen-containing dielectric material, which may be a silicon-oxidebased material such as Tetra Ethyl Ortho Silicate (TEOS) oxide,Plasma-Enhanced CVD (PECVD) oxide (SiO₂), Phospho-Silicate Glass (PSG),Boro-Silicate Glass (BSG), Boron-Doped Phospho-Silicate Glass (BPSG), orthe like. A planarization process such as a Chemical Mechanical Polish(CMP) process or a mechanical grinding process may be performed to levelthe top surfaces of ILD 48, dummy gate stacks 30, and gate spacers 38with each other.

Next, dummy gate stacks 30, which include hard mask layers 36, dummygate electrodes 34, and dummy gate dielectrics 32, are replaced withreplacement gate stacks 56, which include metal gates 54 and gatedielectrics 52 as shown in FIG. 8. When forming replacement gate stacks56, hard mask layers 36, dummy gate electrodes 34, and dummy gatedielectrics 32 as shown in FIG. 7 are first removed in one or aplurality of etching steps, resulting in trenches/openings to be formedbetween gate spacers 38. The top surfaces and the sidewalls ofprotruding semiconductor fins 24′ are exposed to the resulting trenches.

Next, (replacement) gate dielectric layers 52 are formed, which extendinto the trenches between gate spacers 38. In accordance with someembodiments of the present disclosure, each of gate dielectric layers 52include an Interfacial Layer (IL) as its lower part, which contacts theexposed surfaces of the corresponding protruding fins 24′. The IL mayinclude an oxide layer such as a silicon oxide layer, which is formedthrough the thermal oxidation of protruding fins 24′, a chemicaloxidation process, or a deposition process. Gate dielectric layer 52 mayalso include a high-k dielectric layer formed over the IL. The high-kdielectric layer may include a high-k dielectric material such ashafnium oxide, lanthanum oxide, aluminum oxide, zirconium oxide, siliconnitride, or the like. The dielectric constant (k-value) of the high-kdielectric material is higher than 3.9, and may be higher than about7.0. The high-k dielectric layer is formed as a conformal layer, andextends on the sidewalls of protruding fins 24′ and the sidewalls ofgate spacers 38. In accordance with some embodiments of the presentdisclosure, the high-k dielectric layer is formed using ALD or CVD.

Referring further to FIG. 8, gate electrodes 54 are formed over gatedielectrics 52, Gate electrodes 54 include conductive sub-layers. Thesub-layers are not shown separately, while the sub-layers aredistinguishable from each other. The deposition of the sub-layers may beperformed using a conformal deposition method(s) such as ALD or CVD.

The stacked conductive layers may include a diffusion barrier layer andone (or more) work-function layer over the diffusion barrier layer. Thediffusion barrier layer may be formed of titanium nitride (TiN), whichmay (or may not) be doped with silicon. The work-function layerdetermines the work function of the gate, and includes at least onelayer, or a plurality of layers formed of different materials. Thematerial of the work-function layer is selected according to therequirement of the respective FinFET (such as p-type FinFET). Forexample, when the FinFET is a p-type FinFET, the work-function layer mayinclude a TaN layer, a TiN layer over the TaN layer, and a TiAl layerover the TiN layer. After the deposition of the work-function layer(s),a barrier layer, which may be another TiN layer, is formed.

The deposited gate dielectric layers and conductive layers are formed asconformal layers extending into the trenches, and include some portionsover ILD 48. Next, a metallic material is deposited to fill theremaining trenches between gate spacers 38. The metallic material may beformed of tungsten or cobalt, for example. In a subsequent step, aplanarization step such as a CMP process or a mechanical grindingprocess is performed, so that the portions of the gate dielectriclayers, conductive sub-layers, and the metallic material over ILD 48 areremoved. As a result, metal gate electrodes 54 and gate dielectrics 52are formed. Gate electrodes 54 and gate dielectrics 52 are incombination referred to as replacement gate stacks 56. The top surfacesof replacement gate stacks 56, gate spacers 38, CESL 46, and ILD 48 maybe substantially coplanar at this time.

FIG. 8 also illustrates the formation of hard masks 58 in accordancewith some embodiments. The formation of hard mask 58 may includeperforming an etching step to recess gate stacks 56, so that recessesare formed between gate spacers 38, filling the recesses with adielectric material, and then performing a planarization process such asa CMP process or a mechanical grinding process to remove excess portionsof the dielectric material. Hard masks 58 may be formed of siliconnitride, silicon oxynitride, silicon oxy-carbo-nitride, or the like.

FIG. 9A illustrates the formation of contact openings 60. The respectiveprocess is illustrated as process 212 in the process flow 200 shown inFIG. 19. The formation of contact openings 60 include etching ILD 48 toexpose the underlying portions of CESL 46, and then etching the exposedportions of CESL 46 to reveal epitaxy regions 42. In accordance withsome embodiments of the present disclosure, as shown in FIG. 9A, thelength of contact openings 60 is substantially equal to the length ofthe planar top surface of epitaxy regions 42. In accordance with otherembodiments of the present disclosure, contact openings 60 are largerthan illustrated, and may expand to the positions marked by dashed lines45 or larger. As a result, the upper facets (and possibly lower facets)of epitaxy regions 42 may be revealed after the corresponding portionsof CESL 46 are etched. Also, in accordance with some embodiments of thepresent disclosure, as illustrated in FIG. 9A, gate spacers 38 arespaced apart from nearest contact openings 60 by some remaining portionsof ILD 48. In accordance with other embodiments, the sidewalls of gatespacers 38 are exposed to contact openings 60.

FIG. 9B illustrates a cross-sectional view of contact opening 60obtained from the vertical plane containing line 9B-9B in FIG. 9A. FIG.9C illustrates a cross-sectional view of contact opening 60 obtainedfrom the vertical plane containing line 9C-9C in FIG. 9A. In FIG. 9C,the levels of the top surfaces 22A and bottom surfaces 22B of STIregions 22 are illustrated, and semiconductor fins 24′ are over topsurfaces 22A.

Referring to FIG. 10, a patterned mask (not shown) may be formed, whichmay be used to cover some device regions such as n-type FinFET regions,while leave some other portions such as the p-type FinFET regionsexposed. A Pre-Amorphization Implantation (PAI, also sometimes referredto as pre-amorphous implantation) process is performed for forming PAIregions 62 in epitaxy regions 42. The respective process is illustratedas process 214 in the process flow 200 shown in FIG. 19. In accordancewith some embodiments, silicon or germanium is implanted. In accordancewith other embodiments, an inert specie such as neon, argon, xenon, andradon is implanted. The bottom of the implanted regions 62 may be higherthan the top ends of air gaps 43 (FIG. 9B). Furthermore, the bottoms ofthe implanted regions 62 may be at a level higher than about ⅔ of thedepth D1 (FIG. 9B) of air gaps 43. PAI regions 62 may be in epitaxyportions 42B and do not extend into epitaxy portions 42A. Alternatively,PAI regions 62 may extend slightly into epitaxy portions 42A. Thelattice structure of the implanted regions is destructed by the PAI, andPAI regions 62 are converted into amorphous regions.

Next, a p-type impurity (dopant) implantation may be performed. Therespective process is also illustrated as process 214 in the processflow 200 shown in FIG. 19. For example, boron, gallium, and/or indiummay be implanted. In accordance with alternative embodiments, theprocesses of forming the patterned mask, the PAI, and the p-typeimpurity (dopant) implantation are skipped.

FIG. 11A illustrates an anneal process, as represented by arrows 64. Therespective process is illustrated as process 216 in the process flow 200shown in FIG. 19. In accordance with some embodiments, the annealprocess includes a melting laser anneal process. In the melting laseranneal process, at least some portions of epitaxy regions 42 are moltenor only the surface portion is molten. The anneal process, in additionto the melting laser anneal process, may or may not include othernon-melting anneal processes such as, and not limited to, a millisecondanneal process, which may be performed using laser, UV light, flashlamp, etc. In the non-melting anneal processes, no portion of epitaxyregions 42 is molten. The non-melting anneal processes have the effectof activating the dopants in the non-melted portions of the source/drainregions in addition to the molten portions of the source/drain regions.Through the melting laser anneal process, the PAI regions 62 arere-crystallized.

FIG. 11B illustrates the reference cross-section 11B/11C-11B/11C in FIG.11A. Due to that the germanium concentration at the surface of epitaxyregions 42 is high, the surface portions of epitaxy regions 42 are proneto the oxidation due to the oxygen in air and the oxidant in thechemicals of the cleaning processes. As a result, the top surface 42S ofepitaxy region 42 is recessed, and may be continuously curved andcontinuously rounded.

In accordance with some embodiments of the present disclosure, themelting laser anneal is performed by projecting a laser beam on theportions of wafer 10 to be annealed. When a laser beam is used, thelaser beam may have the size of one die or a plurality of dies, or mayhave the size of an entire wafer, and a laser pulse is generated so thatthe entire die, the plurality of dies, or the entire wafer is annealedsimultaneously. The size of the laser beam may also be a fraction (suchas a quarter, a third, a half, etc.) of a device die. In which case, adevice die is annealed through several laser pulses that in combinationcover the entire die. The duration of the laser pulse may be in therange between about 10 nanoseconds and about 1 microsecond. The laserbeam may also be small, and the laser anneal is performed by scanningthe wafer using the laser beam. In accordance with some embodiments ofthe present disclosure, the laser source has polarization function sothat the laser beam is polarized (with the corresponding electricalfield either parallel to or perpendicular to the incident plane of thelaser beam). The laser source may also have pre-heat function to raisethe temperature of the annealed source/drain regions from roomtemperature to a sub-melt temperature (for example, about 700° C.-900°C.). The pre-heating is performed prior to melting the source/drainregions. The pre-heating can also be performed by annealing the wafersusing the laser beam projected through a plurality of projections, eachin an incident angle different from other incident angles of theplurality of projections, so that the energy and the resulting meltingdepths and region can be controlled.

In accordance with some embodiments of the present disclosure, the powerand the duration of the melting laser anneal is adjusted, so that someupper portions (discussed in detail in subsequent paragraphs) of epitaxyregions 42 are molten, and some lower portions are not molten. Sincethere may be air gaps 43 (FIG. 9B), if the lower portions ofsource/drain regions 42 exposed to air gaps 43 are molten, epitaxyregions 42 may undesirably collapse into air gaps 43, and hence it isdesirable that at least a part of the source/drain regions 42 is notmolten.

The melting point of silicon germanium is related to the atomicpercentage of germanium in epitaxy regions 42, and the higher thegermanium percentage is, the lower the melting point will be. Forexample, silicon has the melting point of 1,415° C., and germanium hasthe melting point of 937° C. The melting point of silicon germanium maybe in the range between about 937° C. and about 1,415° C., depending onthe atomic percentage of germanium. Since the lower portions of epitaxyregions 42 may have a lower germanium percentage than the respectiveupper portions, their melting point is higher than the melting point ofthe corresponding upper portions. Therefore, by adjusting the power andlaser duration, the temperature of the annealed portions may be selectedto be higher than the melting point of the portions that are notintended to be molten, and lower than the melting point of the portionsthat are intended to be molten to cause some portions to be molten, andsome other portions not molten, as will be discussed in subsequentparagraphs.

In addition, the amorphized regions 62 have a lower melting point thanthat of the un-amorphized portions of epitaxy regions 42. The meltinglaser anneal may thus be controlled so that the temperature is higherthan the melting point of PAI regions 62 and lower than the meltingpoint of the un-amorphized portions of epitaxy regions 42, so that PAIregions 62 are molten, while the un-amorphized portions of source/drainregions 42 are not molten. Accordingly, the depth of amorphized regions62 is adjusted (for example, smaller than 100 percent or ⅔ of depth D1in FIG. 9B) to control the melting depth to be smaller than depth D1.

As shown in FIG. 11B, epitaxy regions 42 includes regions (portions)42-O and 42-I. Regions 42-O are “on-fin” regions, which overlapsemiconductor strips 24. Regions 42-I are “Intra-fin” regions, which arebetween on-fin regions 42-O. Intra-fins 42-I may overlap air gaps 43.After the melting laser anneal, heat dissipates down in to wafer 10, sothat the molten portions solidify. Since air gaps 43 have lower thermalconductivity values than semiconductor strips 24, the heat in intra-finregions 42-I has a slower dissipation rate than the heat in on-finregions 42-O. As a result, after the melting laser anneal, on-finregions 42-O are solidified earlier than intra-fin regions 42-I. Thesolidification may proceed from the on-fin regions 42-O to intra-finregions 42-I, and from the lower portions to the upper portions ofepitaxy regions 42.

Germanium has a higher solubility in molten silicon germanium than insolid silicon germanium. Accordingly, germanium tends to be concentratedfrom solid or sub-molten (which means partially molten with a higherviscosity) silicon germanium into the molten silicon germanium. As aresult, germanium migrates (concentrates) from the surface portion ofthe solidified silicon germanium into the molten portions, and from the(molten and then solidified) on-fin regions 42-O to the (molten and thensolidified) intra-fin regions 42-I. Regions 44 thus have highergermanium percentages than the neighboring regions after the meltinglaser anneal. Regions 44 are mostly in intra-fin regions 42-I, and mayextend to some upper portions of on-fin regions 42-O. Furthermore, inregions 44, the upper portions may have higher germanium atomicpercentages than the respective lower portions.

In accordance with some embodiments of the present disclosure, themelting laser anneal is performed through a single-shot laser anneal, inwhich a single laser shot (pulse) is performed, and then the moltenregion is solidified. In accordance with alternative embodiments of thepresent disclosure, the melting laser anneal is performed through amulti-shot laser anneal, in which 2, 3, 4, or more (for example, up toabout 9) laser shots are performed before or after the molten region isallowed to be fully solidified. The interval between laser shots may beshorter than about 1 second, and may be shorter than about 0.1 second.or even less than the laser pulse duration, so that when a subsequentshot is performed, the molten region has not been solidified yet.Experiment results indicate that the number of shots may affect thesheet resistance of the annealed region, which may be due to the betterre-crystallization to eliminate defects when more shot are performed.When the energy of each shot is low, for example, lower than about 1.3J/cm², with each shot, the sheet resistance may be reduced over theprevious shots. When the energy of each shot is high, for example,higher than about 1.3 J/cm², more shots do not result in the furtherreduction of the sheet resistance, and a single shot melting laseranneal is performed.

In accordance with some embodiments, the energy of the laser shots is inthe range between about 0.2 J/cm² and about 1.8 J/cm². In accordancewith some embodiments, multi-shots are performed using energies smallerthan about 1.3 J/cm² and may be between about 0.2 J/cm² and about 1.3J/cm². Low energy (such as lower than about 1 J/cm²) may be used tocontrol the molten regions to be not too deep, and multiple shots areused to compensate for the inadequate melting due to the lower energy,and to adequately melt the shallow portions of epitaxy regions 42.

As shown in FIG. 11B, dashed line 66 represents the future interfacebetween source/drain silicide region 72 (FIG. 13A) and the underlyingun-silicided portions of source/drain regions 42. The top portions ofsource/drain regions 42 will be silicided in the subsequent silicidationprocess, and dashed line 66 will be the future top surface ofsource/drain regions 42. Points A, B, and C are illustrated. Point A isin line 66, and is aligned to the middle (vertical) line between twoneighboring semiconductor strips 24. Points B and C are on the oppositesides of point A, and are vertically aligned to the middle (vertical)lines of semiconductor strips 24. Due to the concentrating of germaniumcaused by the melting laser anneal, the germanium atomic percentage atpoint A may be increased by more than about 10 percent, more than about20 percent, or more. For example, before the melting laser anneal, thegermanium atomic percentage at point A may be in the range between about30 percent and about 60 percent, and after the melting laser anneal, thegermanium atomic percentage at point A may be in the range between about50 percent and about 90 percent. On the other hand, in accordance withsome embodiments, at points B and C, the germanium atomic percentagesmay be substantially the same before and after the melting laser anneal,or may be increased. For example, the increase of germanium atomicpercentage at points B and C may be in the range between 0 percent andabout 10 percent. In accordance with some embodiments, before themelting laser anneal, the germanium atomic percentages at points B and Cmay be in the range between about 30 percent and about 60 percent, andafter the melting laser anneal, the germanium atomic percentages atpoints B and C may be in the range between about 30 percent and about 70percent. The magnitude of the increase at points B and C, however, issmaller than the increase at point A. Furthermore, before the meltinglaser anneal, the germanium atomic percentages at points A, B, and C maybe substantially equal to each other, for example, with a differencesmaller than about 5 atomic percent, while after the melting laseranneal, the difference may be greater than about 10 atomic percent, andmay be of any value in the range between about 10 atomic percent andabout 50 atomic percent.

FIGS. 16 and 17 illustrate the difference of germanium atomicpercentages in intra-fin regions 42-I and on-fin regions 42-O. FIG. 16illustrates the atomic percentages of silicon and germanium measured inthe direction represented by arrow 47A in FIG. 11B, which arrow 47A isaligned to the middle line of the intra-fin region 42-I. The measuredsample has spin-on glass (SOG), which includes silicon oxide, overepitaxy region 42. Line 130 and line 132 in FIG. 16 are the atomicpercentages of silicon and germanium (without counting other elementssuch as oxygen), respectively. The region 160 represents the SOG region,and epitaxy region 42 and semiconductor strip 24 are also marked. As isshown in FIG. 16, close to the top surface of epitaxy region 42, whichis also close to the point A in FIG. 11B, the germanium concentration issignificantly increased due to the concentrating caused by the meltinglaser anneal. In the illustrated sample, the peak germanium percentagereaches about 80 percent. The germanium atomic percentage reduces whengoing deeper into epitaxy region 42, and the drop rate depends on thedepth of the molten region.

FIG. 17 illustrates the atomic percentages of silicon and germaniummeasured in the direction represented by arrow 47B in FIG. 11B. SOGregion 162, epitaxy region 42, and semiconductor strip 24 are alsomarked. Line 136 and line 138 are the atomic percentages of silicon andgermanium (without counting other elements such as oxygen),respectively. As is shown in FIG. 17, in the direction of arrow 47B(FIG. 11B), the increase of germanium concentration is much smaller thanin direction 47A (FIG. 11B). In the illustrated sample, the peakgermanium percentage is about 43 percent, which is close to thegermanium atomic percentage before the melting laser anneal.

In accordance with some embodiments, the molten region is relativelyshallow, as shown in FIG. 11B, and hence the germanium-concentratedregion (in which germanium increases significantly, for example, morethan about 10 percent) is as the dashed region 44. In which embodiments,the molten region is shallower. FIG. 11C illustrates the embodiment whenthe molten region is larger than what is shown in FIG. 11B, in which thegermanium-concentrated regions 44′ extend to air gaps 43. Since themolting duration is very short, the molten regions may or may notcollapse into air gaps 43. Furthermore, the portion of the moltenregions directly exposed to air gaps 43 may be sub-molten to prevent thecollapse.

Referring to FIG. 12, metal layer 68 and metal nitride layer 70 aredeposited, for example, using conformal deposition processes. Therespective process is illustrated as process 218 in the process flow 200shown in FIG. 19. In accordance with some embodiments, metal layer 68 isa titanium layer. Metal nitride layer 70 may be a titanium nitridelayer, and may be formed using ALD, CVD, or the like. Metal nitridelayer 70 may also be formed by nitridating the top portion of metallayer 68, and leaving the bottom portion of metal layer 68 notnitridated.

Next, an anneal (which may be rapid thermal anneal) is performed toreact metal layer 68 with the top portion of source/drain regions 42 toform silicide region 72, as shown in FIG. 13A. Silicide region 72 formscurved top surface 42S′ with the underlying source/drain region 42. Therespective process is illustrated as process 220 in the process flow 200shown in FIG. 19. The portions of metal layer 68 on the sidewalls of ILD48 are not reacted. Next, either the previously formed metal nitridelayer 70 is left as not removed, or the previously formed metal nitridelayer 70 is removed, followed by the deposition of a new metal nitridelayer (such as titanium nitride layer) that is thinner than the removedmetal nitride layer. A metallic material 71 such as tungsten, cobalt, orthe like, is then filled into contact openings 60, followed by aplanarization to remove excess materials, resulting in source/draincontact plug 74. Accordingly, source/drain contact plug 74 includes theremaining portions of metal layer 68, metal nitride layer 70, andmetallic material 71.

FIGS. 13B and 13C show a cross-sectional view and a perspective view ofFinFET 76, respectively. The cross-sectional view shown in FIG. 13A isobtained from the vertical plane containing line 13A-13A in FIG. 13C.The cross-sectional view shown in FIG. 13B is obtained from the verticalplane containing line 13B-13B in FIG. 13C.

Referring to FIG. 14, in accordance with some embodiments of the presentdisclosure, etch stop layer 80 is formed. Etch stop layer 80 may beformed of SiN, SiCN, SiC, SiOCN, or another dielectric material. Theformation method may include PECVD, ALD, CVD, or the like. Next, ILD 82is formed over etch stop layer 80. The material of ILD 82 may beselected from the same candidate materials (and methods) for forming ILD48. In accordance with some embodiments, ILD 82 is formed using PECVD,FCVD, spin-on coating, or the like.

ILD 82 and etch stop layer 80 are etched to form openings. The etchingmay be performed using, for example, Reactive Ion Etch (RIE). In asubsequent step, source/drain contact plugs 86 and gate contact plugs 88are formed. In accordance with some embodiments of the presentdisclosure, contact plugs 86 and 88 include barrier layers and ametal-containing material over the corresponding barrier layers.

FIG. 18 illustrates experiment results of the germanium distribution inaccordance with some embodiments, wherein germanium percentages areshown as a function of the depth into epitaxy silicon germanium region.The X-axis value of 0 corresponds to the top surface of epitaxy silicongermanium region, and the increase in the X-axis values corresponds tothe increased depth into the silicon germanium region. Line 110represents the germanium percentage before the PAI and anneal processes.Line 112 represents the germanium percentage after a non-melting annealprocess is preformed. Line 112 is substantially overlapped with line110, indicating that the non-melt anneal does not cause theredistribution of germanium. Line 114 represents the germaniumpercentage after a melting laser anneal process performed with a lowerpower (and lower temperature). Line 116 represents the germaniumpercentage after a melting laser anneal process performed with a higherpower (and higher temperature). In lines 114 and 116, significantgermanium redistribution caused by melting laser anneal is observed.

The embodiments of the present disclosure have some advantageousfeatures. The melting laser anneal causes the germanium to beconcentrated to the top surfaces of source/drain regions. Since thegermanium atomic percentage is high where the source/drain regionscontact the source/drain silicide regions, the Schottky barrier heightis reduced, and contact resistance is reduced. Due to the liquidationand re-crystallization caused by the melting laser anneal, the defectsin source/drain region may be eliminated. Furthermore, the depths of themolten regions may be controlled by forming air gaps, amorphizationimplantation, and multi-short anneals. In addition, the melting laseranneal may fully fix the defects caused by the implantation of thesource/drain regions, which defects may cause the voids at the interfacebetween silicide regions and epitaxy regions.

In accordance with some embodiments of the present disclosure, a methodincludes forming a gate stack over a first portion of a firstsemiconductor region; removing a second portion of the firstsemiconductor region on a side of the gate stack to form a recess;growing a second semiconductor region starting from the recess;implanting the second semiconductor region with an impurity; andperforming a melting laser anneal on the second semiconductor region,wherein a first portion of the second semiconductor region is moltenduring the melting laser anneal, and a second and a third portion of thesecond semiconductor region on opposite sides of the first portion areun-molten. In an embodiment, the melting laser anneal comprises aplurality of laser shots. In an embodiment, the first portion overlapsan air gap, and the second portion and the third portion overlap, andare connected to, semiconductor strips extending between isolationregions. In an embodiment, portions of the first portion exposed to theair gap are not molten during the melting laser anneal. In anembodiment, the second semiconductor region is implanted to a depthsmaller about ⅔ of a depth of the air gap. In an embodiment, the secondsemiconductor region comprises a lower portion and an upper portion overthe lower portion, and in the melting laser anneal, the lower portion isnot molten, and the upper portion is molten. In an embodiment, the lowerportion has a first germanium percentage lower than a second germaniumpercentage of the upper portion. In an embodiment, the implanting thesecond semiconductor region is performed using silicon, germanium, or aninert gas. In an embodiment, the method further comprises depositing acontact etch stop layer over the second semiconductor region; forming aninter-layer dielectric over the contact etch stop layer; and etching theinter-layer dielectric and the contact etch stop layer to form a contactopening, wherein the implanting and the melting laser anneal areperformed through the contact opening.

In accordance with some embodiments of the present disclosure, a methodincludes etching a portion of a semiconductor fin on a side of a gatestack to form a recess; epitaxially growing a silicon germanium layercomprising: a first portion and a second portion overlapping andconnected to a first semiconductor strip and a second semiconductorstrip, respectively; and a third portion interconnecting the firstportion and the second portion; performing a melting laser anneal, withthe melting laser anneal performed through a plurality of laser shots;and forming a silicide layer over and contacting the silicon germaniumlayer. In an embodiment, the melting laser anneal comprises three lasershots. In an embodiment, intervals between the plurality of laser shotsare shorter than one second. In an embodiment, during the melting laseranneal, the third portion of the silicon germanium layer has at least anupper portion molten, and the first portion and the second portion arenot molten. In an embodiment, the third portion of the silicon germaniumlayer further comprises a lower portion, and wherein the lower portionis un-molten during the melting laser anneal. In an embodiment, themethod further comprises amorphizing an upper portion of the silicongermanium layer to form an amorphous region, wherein a lower portion ofthe silicon germanium layer is under the amorphous region, and duringthe melting laser anneal, the amorphous region of the silicon germaniumlayer is molten, and the lower portion of the silicon germanium layerremains as a solid.

In accordance with some embodiments of the present disclosure, a deviceincludes isolation regions; a first semiconductor strip and a secondsemiconductor strip between the isolation regions; a first semiconductorfin and a second semiconductor fin protruding higher than top surfacesof the isolation regions, wherein the first semiconductor fin and thesecond semiconductor fin overlap the first semiconductor strip and thesecond semiconductor strip, respectively; a gate stack on a top surfaceand a sidewall of each of the first semiconductor fin and the secondsemiconductor fin; a source/drain region on a side of the gate stack,wherein the source/drain region comprises silicon germanium, and thesource/drain region comprises: a first portion and a second portionoverlapping the first semiconductor strip and the second semiconductorstrip, respectively, and a third portion between the first portion andthe second portion of the source/drain region; and a silicide layer overand forming an interface with the source/drain region, wherein at theinterface, the source/drain region comprises: a first point in a firstmiddle line between the first semiconductor strip and the secondsemiconductor strip, wherein at the first point, the source/drain regionhas a first germanium atomic percentage; and a second point in a secondmiddle line of the first semiconductor strip, wherein at the secondpoint, the source/drain region has a second germanium atomic percentagehigher than the first germanium atomic percentage. In an embodiment, thefirst germanium atomic percentage is higher than the second germaniumatomic percentage by a difference greater than about 10 percent. In anembodiment, in the third portion of the source/drain region, germaniumatom percentages reach a peak value at a position close to theinterface. In an embodiment, the first germanium atomic percentage is ina range between about 50 percent and about 90 percent, and the secondgermanium atomic percentage is in a range between about 30 percent andabout 70 percent. In an embodiment, from the first point down in thesource/drain region, germanium atomic percentages decrease continuously.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method comprising: forming a gate stack over afirst portion of a first semiconductor region; removing a second portionof the first semiconductor region on a side of the gate stack to form arecess; growing a second semiconductor region starting from the recess;implanting the second semiconductor region with an impurity; andperforming a melting laser anneal on the second semiconductor region,wherein the performing the melting laser anneal comprises projecting alaser beam on an exposed top surface of the second semiconductor region,wherein a first portion of the second semiconductor region is moltenduring the melting laser anneal, and a second and a third portion of thesecond semiconductor region on opposite sides of the first portion areun-molten.
 2. The method of claim 1, wherein the melting laser annealcomprises a plurality of laser shots.
 3. The method of claim 1, whereinthe first portion overlaps an air gap, and the second portion and thethird portion overlap, and are connected to, semiconductor stripsextending between isolation regions.
 4. The method of claim 3, whereinportions of the first portion exposed to the air gap are not moltenduring the melting laser anneal.
 5. The method of claim 3, wherein thesecond semiconductor region is implanted to a depth smaller about ⅔ of adepth of the air gap.
 6. The method of claim 1, wherein the secondsemiconductor region comprises a lower portion and an upper portion overthe lower portion, and in the melting laser anneal, the lower portion isnot molten, and the upper portion is molten.
 7. The method of claim 6,wherein the lower portion has a first germanium percentage lower than asecond germanium percentage of the upper portion.
 8. The method of claim1, wherein the implanting the second semiconductor region is performedusing silicon, germanium, or an inert gas.
 9. The method of claim 1further comprising: depositing a contact etch stop layer over the secondsemiconductor region; forming an inter-layer dielectric over the contactetch stop layer; and etching the inter-layer dielectric and the contactetch stop layer to form a contact opening, wherein the implanting andthe melting laser anneal are performed through the contact opening. 10.A method comprising: etching a portion of a semiconductor fin on a sideof a gate stack to form a recess; epitaxially growing a silicongermanium layer comprising: a first portion and a second portionoverlapping and connected to a first semiconductor strip and a secondsemiconductor strip, respectively; and a third portion interconnectingthe first portion and the second portion; performing a melting laseranneal, with the melting laser anneal performed through a plurality oflaser shots, wherein during the melting laser anneal the third portionhas a slower heat dissipation rate than the first portion and the secondportion; and forming a silicide layer over and contacting the silicongermanium layer.
 11. The method of claim 10, wherein the melting laseranneal comprises three laser shots.
 12. The method of claim 11, whereinintervals between the plurality of laser shots are shorter than onesecond.
 13. The method of claim 10, wherein during the melting laseranneal, the third portion of the silicon germanium layer has at least anupper portion molten, and the first portion and the second portion arenot molten.
 14. The method of claim 10, wherein the third portion of thesilicon germanium layer further comprises a lower portion, and whereinthe lower portion is un-molten during the melting laser anneal.
 15. Themethod of claim 14 further comprising: amorphizing an upper portion ofthe silicon germanium layer to form an amorphous region, wherein a lowerportion of the silicon germanium layer is under the amorphous region,and during the melting laser anneal, the amorphous region of the silicongermanium layer is molten, and the lower portion of the silicongermanium layer remains as a solid.
 16. A device comprising: isolationregions; a first semiconductor strip and a second semiconductor stripbetween the isolation regions; a first semiconductor fin and a secondsemiconductor fin protruding higher than top surfaces of the isolationregions, wherein the first semiconductor fin and the secondsemiconductor fin overlap the first semiconductor strip and the secondsemiconductor strip, respectively; a gate stack on a top surface and asidewall of each of the first semiconductor fin and the secondsemiconductor fin; a source/drain region on a side of the gate stack,wherein the source/drain region comprises silicon germanium, and thesource/drain region comprises: a first portion and a second portionoverlapping the first semiconductor strip and the second semiconductorstrip, respectively, and a third portion between the first portion andthe second portion of the source/drain region; and a silicide layer overand forming an interface with the source/drain region, wherein at theinterface, the source/drain region comprises: a first point in a firstmiddle line between the first semiconductor strip and the secondsemiconductor strip, wherein at the first point, the source/drain regionhas a first germanium atomic percentage; and a second point in a secondmiddle line of the first semiconductor strip, wherein at the secondpoint, the source/drain region has a second germanium atomic percentagelower than the first germanium atomic percentage, wherein from the firstpoint down in the source/drain region, germanium atomic percentagesdecrease continuously.
 17. The device of claim 16, wherein the firstgermanium atomic percentage is higher than the second germanium atomicpercentage by a difference greater than about 10 percent.
 18. The deviceof claim 16, wherein in the third portion of the source/drain region,germanium atom percentages reach a peak value at a position close to theinterface.
 19. The device of claim 16, wherein the first germaniumatomic percentage is in a range between about 50 percent and about 90percent, and the second germanium atomic percentage is in a rangebetween about 30 percent and about 70 percent.
 20. The device of claim16, wherein a top surface of the source/drain region is continuouslycurved and continuously rounded.